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1 MRF5S19130R3 mrf5s19130sr3 motorola rf device data the rf sub - micron mosfet line rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for pcn and pcs base stat ion applications at frequencies from 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2 - carrier n - cdma performance for v dd = 28 volts, i dq = 1200 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carrier. adjacent channels measured over a 30 khz bandwidth at f1 - 885 khz and f2 +885 khz. distortion products measured over 1.2288 mhz bandwidth at f1 - 2.5 mhz and f2 +2.5 mhz. peak/avg. = 9.8 db @ 0.01% probability on ccdf. output power ? 26 watts avg. power gain ? 13 db efficiency ? 25% im3 ? - 37 dbc acpr ? - 51 db ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, f1 = 1960 mhz, 110 watts cw output power ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? qualified up to a maximum of 32 v operation ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain - source voltage v dss 65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 324 1.85 watts w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c cw operation cw 110 watts thermal characteristics characteristic symbol max unit thermal resistance, junction to case case temperature 80 c, 110 w cw case temperature 80 c, 26 w cw r jc 0.54 0.60 c/w note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf5s19130/d motorola semiconductor technical data MRF5S19130R3 mrf5s19130sr3 1990 mhz, 26 w avg., 2 x n - cdma, 28 v lateral n - channel rf power mosfets case 465c - 02, style 1 ni - 880s mrf5s19130sr3 case 465b - 03, style 1 ni - 880 MRF5S19130R3 ? motorola, inc. 2003 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19130R3 mrf5s19130sr3 2 motorola rf device data esd protection characteristics test conditions class human body model 2 (minimum) machine model m4 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2.5 2.8 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1200 madc) v gs(q) ? 3.8 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) ? 0.26 ? vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.5 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.7 ? pf functional tests (in motorola test fixture, 50 ohm system) 2 - carrier n - cdma, 1.2288 mhz channel bandwidth carriers. peak/avg = 9.8 db @ 0.01% probability on ccdf. common - source amplifier power gain (v dd = 28 vdc, p out = 26 w avg, i dq = 1200 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 12 13 ? db drain efficiency (v dd = 28 vdc, p out = 26 w avg, i dq = 1200 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) 23 25 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 26 w avg, i dq = 1200 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz; im3 measured over 1.2288 mhz bandwidth at f1 - 2.5 mhz and f2 +2.5 mhz referenced to carrier channel power.) im3 ? -37 -35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 26 w avg, i dq = 1200 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz; acpr measured over 30 khz bandwidth at f1 - 885 khz and f2 +885 khz) acpr ? -51 -48 dbc input return loss (v dd = 28 vdc, p out = 26 w avg, i dq = 1200 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) irl ? -15 -9 db (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3 MRF5S19130R3 mrf5s19130sr3 motorola rf device data figure 1. MRF5S19130R3(sr3) test circuit schematic z13, z14 1.125 x 0.068 microstrip z15 0.071 x 1.080 microstrip z16 0.060 x 1.080 microstrip z17 0.290 x 1.080 microstrip z18 1.075 x 0.825 x 0.125 taper z19 0.635 x 0.120 microstrip z20 0.185 x 0.096 microstrip z21 0.414 x 0.084 microstrip z22 0.040 x 0.084 microstrip z23 0.199 x 0.057 microstrip pcb arlon gx0300 - 55 - 22, 0.03 , r = 2.55 z1 0.200 x 0.085 microstrip z2 0.170 x 0.085 microstrip z3 0.480 x 0.085 microstrip z4 0.926 x 0.085 microstrip z5 0.590 x 0.085 microstrip z6 0.519 x 0.955 x 0.160 taper z7 0.022 x 0.955 microstrip z8 0.046 x 0.955 microstrip z9 0.080 x 0.955 microstrip z10, z11 1.280 x 0.046 microstrip z12 0.053 x 1.080 microstrip c9 r2 v gg v dd c24 c19 c17 c4 c8 c15 c1 rf output rf input r1 z1 z2 z4 z5 z6 z10 z13 z16 z17 + dut c10 c23 c21 b1 r3 c25 z12 z22 c6 c7 z9 c2 z3 c3 z11 c11 b2 r4 c12 c14 c13 c16 c18 c20 c22 c30 c29 c32 c31 c27 c28 c33 c34 c26 z14 + + + + + + + c5 z7 z8 z15 z23 z24 z18 z19 z20 z21 + + + + table 1. MRF5S19130R3(sr3) test circuit component designations and values part description value, p/n or dwg manufacturer b1, b2 short rf bead 95f786 newark c1 0.8 pf chip capacitor, b case 100b0r8bp 500x atc c2, c4 0.6 ? 4.5 pf gigatrim variable capacitors 44f3358 newark c3 2.2 pf chip capacitor, b case 100b2r2bp 500x atc c5 1.7 pf chip capacitor, b case 100b1r7bp 500x atc c8, c13 9.1 pf chip capacitors, b case 100b9r1cp 500x atc c9, c11 1 f, 25 v tantalum capacitors 92f1845 newark c10 47 f, 50 v electrolytic capacitor 51f2913 newark c6, c14, c17, c18, c19, c28, c29, c30 0.1 f chip capacitors, b case cdr33bx104akws kemet c7, c12, c16, c27 1000 pf chip capacitors, b case 100b102jp 500x atc c15, c26 8.2 pf chip capacitors, b case 100b8r2cp 500x atc c20, c21, c22, c23, c31, c32, c33, c34 22 f, 35 v tantalum capacitors 92f1853 newark c24 470 f, 63 v electrolytic capacitor 95f4579 newark c25 6.2 pf chip capacitor, b case 100b6r2cp 500x atc r1 1 k chip resistor d5534m07b1k00r newark r2 560 k chip resistor cr1206 564jt newark r3, r4 12 chip resistors rm73b2b120jt garrett electtonics f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19130R3 mrf5s19130sr3 4 motorola rf device data figure 2. MRF5S19130R3(sr3) test circuit component layout mrf5s19130 rev 5 cut out area v gg v dd c24 c21 c20 c19 c18 c15 c23 c22 c17 c16 c25 c32 c31 c30 c29 c34 c33 c28 c27 c26 c14 c12 c11 c6 c7 c10 b2 r4 c13 c1 c2 c3 c4 c5 c9 r2 r1 b1 r3 c8 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5 MRF5S19130R3 mrf5s19130sr3 motorola rf device data typical characteristics 2000 5 15 1900 ?60 40 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier n - cdma broadband performance g ps , power gain (db) v dd = 28 vdc, p out = 26 w (avg.), i dq = 1200 ma 2?carrier n?cdma, 2.5 mhz carrier spacing 1.2288 mhz channel bandwidth peak/avg. = 9.8 db @ 0.01% probability (ccdf) , drain ?30 ?5 ?10 ?15 ?20 input return loss (db) irl, efficiency (%) im3 (dbc), acpr (dbc) ?25 1990 1980 1970 1960 1950 1940 1930 1920 1910 14 35 13 30 12 25 11 20 10 ?10 9 ?20 8 ?30 7 ?40 6 ?50 200 10 16 1 p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) i dq = 1800 ma v dd = 28 vdc, f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurement, 2.5 mhz tone spacing 1500 ma 1200 ma 600 ma 900 ma 15 14 13 12 11 10 100 200 ?60 ?25 1 i dq = 1800 ma p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power intermodulation distortion (dbc) v dd = 28 vdc, f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurement, 2.5 mhz tone spacing im3, third order 10 100 ?30 ?40 ?45 ?50 ?55 ?35 1500 ma 1200 ma 600 ma 900 ma 10 ?60 ?20 0.1 3rd order two?tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, v dd = 28 vdc, p out = 130 w (pep), i dq = 1200 ma two?tone measurements, center frequency = 1960 mhz 1 ?25 ?30 ?35 ?40 ?45 ?50 ?55 5th order 7th order 45 48 60 35 p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) 36 37 38 39 40 41 42 43 44 59 58 57 56 55 54 53 52 51 50 49 p3db = 53.11 dbm (205.57 w) v dd = 28 vdc, i dq = 1200 ma pulsed cw, 8 sec (on), 1 msec (off) center frequency = 1960 mhz p1db = 52.54 dbm (179.61 w) actual ideal f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19130R3 mrf5s19130sr3 6 motorola rf device data typical characteristics 0 35 1 ?65 ?30 g ps acpr im3 p out , output power (watts) avg. (n?cdma) figure 8. 2 - carrier n - cdma acpr, im3, power gain and drain efficiency versus output power , drain efficiency (%), g ps , power gain (db) v dd = 28 vdc, i dq = 1200 ma f1 = 1958.75 mhz, f2 = 1961.25 mhz 2 x n?cdma, 2.5 mhz @ 1.2288 mhz channel bandwidth peak/avg. = 9.8 db @ 0.01% probability (ccdf) im3 (dbc), acpr (dbc) 10 30 ?35 25 ?40 20 ?45 15 ?50 10 ?55 5 ?60 ?100 0 f, frequency (mhz) figure 9. 2 - carrier n - cdma spectrum (db) ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?acpr @ 30 khz integrated bw +acpr @ 30 khz integrated bw ?im3 @ 1.2288 mhz integrated bw +im3 @ 1.2288 mhz integrated bw 1.2288 mhz channel bw 6 1.5 4.5 3 0 ?1.5 ?3 ?4.5 ?6 ?7.5 7.5 220 10 5 10 9 100 figure 10. mtbf factor versus junction temperature 10 8 10 7 10 6 120 140 160 180 200 mtbf factor (hours x amps 2 ) t j , junction temperature ( c) this above graph displays calculated mtbf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mtbf factor by i d 2 for mtbf in a particular application. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7 MRF5S19130R3 mrf5s19130sr3 motorola rf device data figure 11. series equivalent source and load impedance f mhz z source ? z load ? 1930 1960 1990 2.57 - j9.1 3.86 - j9.2 2.35 - j7.6 1.48 - j1.8 1.28 - j1.5 1.42 - j1.3 v dd = 28 v, i dq = 1.2 a, p out = 26 w (2?carrier n?cdma) z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z o = 10 ? f = 1930 mhz f = 1990 mhz f = 1930 mhz f = 1990 mhz z load * z source f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19130R3 mrf5s19130sr3 8 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9 MRF5S19130R3 mrf5s19130sr3 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19130R3 mrf5s19130sr3 10 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
11 MRF5S19130R3 mrf5s19130sr3 motorola rf device data package dimensions case 465b - 03 issue b ni - 880 MRF5S19130R3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. deleted dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.535 0.545 13.6 13.8 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 q .118 .138 3.00 3.51 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h f q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) s m a m aaa b m t (insulator) r m a m ccc b m t (lid) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 aaa 0.007 ref 0.178 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref case 465c - 02 issue a ni - 880s mrf5s19130sr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.905 0.915 22.99 23.24 b 0.535 0.545 13.60 13.80 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 d k c e h f m a m bbb b m t b b (flange) m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.007 ref 0.178 ref f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19130R3 mrf5s19130sr3 12 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2003 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors mrf5s19130/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .

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